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this is information on a product in full production. august 2013 docid018590 rev 3 1/15 STB18NF30 automotive-grade n-channel 330 v, 160 m typ., 18 a stripfet? ii power mosfet in a d2pak package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? 100% avalanche tested ? 175 c junction temperature applications ? switching applications description this power mosfet has been developed using stmicroelectronics? unique stripfet process, which is specifically designed to minimize input capacitance and gate charge. this renders the device suitable for use as primary switch in advanced high-efficiency isolated dc-dc converters for telecom and computer applications, and applications with low gate charge driving requirements. d2pak 1 3 tab $0y 'ru7$% * 6 order code v dss r ds(on) max. i d STB18NF30 330 v 180 m 18 a table 1. device summary order code marking package packaging STB18NF30 18nf30 d2pak tape and reel www.st.com
contents STB18NF30 2/15 docid018590 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid018590 rev 3 3/15 STB18NF30 electrical ratings 15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 330 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according to r thj-c . drain current (continuous) at t c = 25 c 18 a drain current (continuous) at t c = 100 c 12 a i dm (2) 2. pulse is rated according to soa. drain current (pulsed) 72 a p tot total dissipation at t c = 25 c 150 w dv/dt (3) 3. i sd 18 a, di/dt 200 a/s, v dd 80%v (br)dss peak diode recovery voltage slope 10 v/ns t stg storage temperature -55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 1 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board. thermal resistance junction-pcb 30 table 4. avalanche data symbol parameter value unit i av non-repetitive avalanche current 14 a e as single pulse avalanche energy (starting t j =25 c, i d =i av , v dd =50 v) 200 mj
electrical characteristics STB18NF30 4/15 docid018590 rev 3 2 electrical characteristics (t case =25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =1 ma, v gs =0 330 - v i dss zero gate voltage drain current (v gs = 0) v ds =330 v v ds =330 v,tc=125 c -1a 50 a i gss gate body leakage current (v ds = 0) v gs =20 v - 100 na v gs(th) gate threshold voltage v ds =v gs , i d = 250 a 2 - 4 v r ds(on) static drain-source on-resistance v gs =10 v, i d =9 a 160 180 m table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =25 v, f=1 mhz, v gs =0 v - 1650 - pf c oss output capacitance - 220 pf c rss reverse transfer capacitance -30 pf q g total gate charge v dd =264 v, i d =18 a, v gs =10 v (see figure 14 ) -44- nc q gs gate-source charge - 7 - nc q gd gate-drain charge - 17 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =165 v, i d = 9 a, r g = 4.70 , v gs =10 v (see figure 13 ) -20-ns t r rise time - 18 - ns t d(off) turn-off delay time - 145 - ns t f fall time - 45 - ns
docid018590 rev 3 5/15 STB18NF30 electrical characteristics 15 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 18 a i sdm source-drain current (pulsed) -72a v sd forward on voltage i sd =18 a, v gs =0 v - 1.5 v t rr reverse recovery time i sd =18 a, di/dt=100 a/s, v dd =100 v (see figure 15 ) - 180 400 ns q rr reverse recovery charge - 1.5 c i rrm reverse recovery current - 16 a t rr reverse recovery time i sd =18 a, di/dt=100 a/s, v dd =100 v, tj=150 c (see figure 15 ) - 210 ns q rr reverse recovery charge - 1.9 c i rrm reverse recovery current - 19 a
electrical characteristics STB18NF30 6/15 docid018590 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=175c tc=25c single pulse am12973v1 i d 30 20 10 0 0 10 v ds (v) 20 (a) 5 15 25 40 50 4v 6v v gs =10v am12974v1 i d 30 20 10 0 0 4 v gs (v) 8 (a) 2 6 10 40 50 v ds =25v am12975v1 bv dss -75 t j (c) (norm) -25 75 25 125 0.6 0.7 0.8 0.9 1.0 1.1 175 i d =1ma am12976v1 r ds(on) 0.13 0.12 0.11 0.10 0 10 i d (a) ( ) 5 15 0.14 0.15 0.16 0.17 v gs =10v 0.18 am12977v1
docid018590 rev 3 7/15 STB18NF30 electrical characteristics 15 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics v gs 6 4 2 0 0 10 q g (nc) (v) 40 8 20 30 10 v dd =264v i d =18a 50 12 150 100 50 0 200 250 v ds v ds (v) am12978v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am12979v1 v gs(th) 0.6 0.4 0.2 0 -100 0 t j (c) (norm) -50 0.8 50 100 150 1.2 1.0 1.4 1.6 1.8 i d =250a am12980v1 r ds(on) 2.0 1.5 1.0 0.5 -100 0 t j (c) (norm) -50 50 100 150 2.5 0 v gs =10v i d =9a am12981v1 v sd 0 10 i sd (a) (v) 5 15 0 0.2 0.4 0.6 0.8 1.0 t j =25c t j =175c t j =-50c am12982v1
test circuits STB18NF30 8/15 docid018590 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid018590 rev 3 9/15 STB18NF30 package mechanical data 15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STB18NF30 10/15 docid018590 rev 3 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
docid018590 rev 3 11/15 STB18NF30 package mechanical data 15 figure 19. d2pak (to-263) drawing figure 20. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
packaging mechanical data STB18NF30 12/15 docid018590 rev 3 5 packaging mechanical data table 10. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
docid018590 rev 3 13/15 STB18NF30 packaging mechanical data 15 figure 21. tape figure 22. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STB18NF30 14/15 docid018590 rev 3 6 revision history table 11. document revision history date revision changes 13-jan-2012 1 first release 23-may-2012 2 section 2.1: electrical characteristics (curves) has been added. document status promoted from preliminary data to production data. 06-aug-2013 3 ? updated: section 4: package mechanical data ? updated: figure 13 , 14 , 15 and 16 ? added: dv/dt in table 2 ? minor text changes
docid018590 rev 3 15/15 STB18NF30 15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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